D44H11TU ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com D44H11TU rev. b2 1 april 2009 D44H11TU npn epitaxial silicon transistor ? low collector-emitter saturation voltage : v ce (sat) = 1v (max.) @ 8a ? fast switching speeds ? complement to kse45h absolute maximum ratings t a = 25 c unless otherwise noted thermal characteristics t a = 25 c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current (dc) 10 a i cp collector-current (pulse) 20 a t j junction temperature 150 c t stg storage temperature - 55 to 150 c symbol parameter max. units p d total device dissipation t c = 25 c t a = 25 c 50 1.67 w r jc thermal resistance, junction to case 2.5 c/w r ja thermal resistance, junction to ambient 74.8 c/w 1.base 2.collector 3.emitter 1 to-220
D44H11TU ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com D44H11TU rev. b2 2 electrical characteristics t a = 25 c unless otherwise noted notes: 1) these ratings are limiting values above which the serv iceability of any semiconductor device may be impaired. 2) these are steady state limits. the factory should be consul ted on applications involving pulsed or low duty cycle operation s. 3) these ratings are based on a maximum junction temperature of 150degrees c. symbol parameter test condition min. typ. max. units bv ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 80 v bv ebo emitter-base breakdown voltage i e = 500 a, i c = 0 5 v i ces collector cut-off current v ce = rated v ceo, v eb = 0 10 a i ebo emitter cut-off current v eb = 5v, i c = 0 100 a h fe dc current gain v ce = 1v, i c = 2a 60 v ce(sat) collector-emitter saturation voltage i c = 8a, i b = 0.4a 1 v v be(sat) base-emitter saturation voltage i c = 8a, i b = 0.8a 1.5 v f t current gain bandwidth product v ce = 10v, i c = 0.5a 50 mhz c ob output capacitance v cb = 10v, f = 1mhz 130 pf t on turn on time v cc = 20v, i c = 5a i b1 = - i b2 = 0.5a 300 ns t stg storage time 500 ns t f fall time 140 ns
D44H11TU ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com D44H11TU rev. b2 3 typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. collector output capacitance figure 4. safe operating area figure 5. power derating 0.01 0.1 1 10 1 10 100 1000 v ce = 1v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 110100 10 100 1000 f=100mhz c ob [pf], capacitance v cb [v], collector-base voltage 110100 0.1 1 10 44h 1,2 44h 4,5 44h 7,8 44h 10,11 100 s 10 s 1 s 1 ms d c i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 p c [w], power dissipation tc[ o c], case temperature
D44H11TU ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com D44H11TU rev. b2 4 mechanical dimensions to-220 dimensions in millimeters
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